Structural, compositional and optical analysis of InAsxSb1-x crystals grown by vertical directional solidification method
Identifieur interne : 000470 ( Main/Repository ); précédent : 000469; suivant : 000471Structural, compositional and optical analysis of InAsxSb1-x crystals grown by vertical directional solidification method
Auteurs : RBID : Pascal:13-0040461Descripteurs français
- Pascal (Inist)
- Solidification dirigée, Croissance cristalline en phase fondue, Semiconducteur III-V, Détection IR, Méthode phase fondue, Croissance cristalline, Antimoniure d'indium, Composé III-V, Arsenic, Indium, Antimoine, Traitement thermique, Quartz, Fissuration, Monocristal, Propriété mécanique, Vitesse refroidissement, Diffraction RX, Sonde électronique, Analyse microsonde électronique, Transformation Fourier, Spectre absorption, Bande interdite, Propriété électronique, Transmission optique, Propriété optique, Réaction état solide, InAsxSb1-x, 8130F, 8110F.
- Wicri :
- concept : Antimoine.
English descriptors
- KwdEn :
- Absorption spectra, Antimony, Arsenic, Cooling rate, Cracking, Crystal growth, Crystal growth from melts, Directional solidification, Electron microprobe analysis, Electron probes, Electronic properties, Energy gap, Fourier transformation, Growth from melt, Heat treatments, III-V compound, III-V semiconductors, Indium, Indium antimonides, Infrared detection, Mechanical properties, Monocrystals, Optical properties, Optical transmission, Quartz, Solid state reaction, XRD.
Abstract
Semiconductor InAsxSb1-x crystals exhibit superior infrared detection properties but their applications are limited by the lack of production of these stoichiometric single crystal substrates by any melt crystal growth techniques. Indium Arsenic Antimonide (InAsxSb1-x) crystals have been grown from melts of Indium(In), Arsenic(As) and Antimony(Sb) by the vertical directional solidification technique using resistive heating furnace and quartz "double ampoule" after overcoming some problems like ampoule breaking and crystal cracking. A cooling rate of 2 °C/h is better for producing homogenous crystals. Cooling rates less than 2 °C/h result in breaking of the ampoule. The grown InAsxSb1-x crystals are characterized by X-ray diffraction (XRD), electron probe micro analysis (EPMA) and Fourier transform infra red (FT-IR) which contributes to the identification of arsenic (x). Transmission spectra have been taken for the different sections of the crystal and the band gap has been calculated for as grown crystals. Optical transmission analysis indicates the incorporation of arsenic inside the grown crystals of InAsxSb1-x. The energy gap decreases with the increase in the arsenic concentration, which implies the incorporation of Arsenic.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 001386
Links to Exploration step
Pascal:13-0040461Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structural, compositional and optical analysis of InAs<sub>x</sub>Sb<sub>1-x</sub> crystals grown by vertical directional solidification method</title><author><name sortKey="Haris, M" uniqKey="Haris M">M. Haris</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku</s1><s2>Hamamatsu 432-8011</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Hamamatsu 432-8011</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centerfor Condensed Matter Sciences, National Taiwan University</s1><s2>Taipei 10617</s2><s3>TWN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Taipei 10617</wicri:noRegion></affiliation></author><author><name sortKey="Hayakawa, Y" uniqKey="Hayakawa Y">Y. Hayakawa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku</s1><s2>Hamamatsu 432-8011</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Hamamatsu 432-8011</wicri:noRegion></affiliation></author><author><name sortKey="Chou, F C" uniqKey="Chou F">F. C. Chou</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centerfor Condensed Matter Sciences, National Taiwan University</s1><s2>Taipei 10617</s2><s3>TWN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Taipei 10617</wicri:noRegion></affiliation></author><author><name sortKey="Veeramani, P" uniqKey="Veeramani P">P. Veeramani</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, University of Surrey</s1><s2>Guildford GU2 7XH</s2><s3>GBR</s3><sZ>4 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Guildford GU2 7XH</wicri:noRegion></affiliation></author><author><name sortKey="Moorthy Babu, S" uniqKey="Moorthy Babu S">S. Moorthy Babu</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Crystal Growth Centre, Anna University</s1><s2>Chennai 600 025</s2><s3>IND</s3><sZ>5 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Chennai 600 025</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0040461</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0040461 INIST</idno><idno type="RBID">Pascal:13-0040461</idno><idno type="wicri:Area/Main/Corpus">001386</idno><idno type="wicri:Area/Main/Repository">000470</idno></publicationStmt><seriesStmt><idno type="ISSN">0925-8388</idno><title level="j" type="abbreviated">J. alloys compd.</title><title level="j" type="main">Journal of alloys and compounds</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Antimony</term><term>Arsenic</term><term>Cooling rate</term><term>Cracking</term><term>Crystal growth</term><term>Crystal growth from melts</term><term>Directional solidification</term><term>Electron microprobe analysis</term><term>Electron probes</term><term>Electronic properties</term><term>Energy gap</term><term>Fourier transformation</term><term>Growth from melt</term><term>Heat treatments</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium</term><term>Indium antimonides</term><term>Infrared detection</term><term>Mechanical properties</term><term>Monocrystals</term><term>Optical properties</term><term>Optical transmission</term><term>Quartz</term><term>Solid state reaction</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Solidification dirigée</term><term>Croissance cristalline en phase fondue</term><term>Semiconducteur III-V</term><term>Détection IR</term><term>Méthode phase fondue</term><term>Croissance cristalline</term><term>Antimoniure d'indium</term><term>Composé III-V</term><term>Arsenic</term><term>Indium</term><term>Antimoine</term><term>Traitement thermique</term><term>Quartz</term><term>Fissuration</term><term>Monocristal</term><term>Propriété mécanique</term><term>Vitesse refroidissement</term><term>Diffraction RX</term><term>Sonde électronique</term><term>Analyse microsonde électronique</term><term>Transformation Fourier</term><term>Spectre absorption</term><term>Bande interdite</term><term>Propriété électronique</term><term>Transmission optique</term><term>Propriété optique</term><term>Réaction état solide</term><term>InAsxSb1-x</term><term>8130F</term><term>8110F</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Antimoine</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Semiconductor InAs<sub>x</sub>Sb<sub>1-x</sub> crystals exhibit superior infrared detection properties but their applications are limited by the lack of production of these stoichiometric single crystal substrates by any melt crystal growth techniques. Indium Arsenic Antimonide (InAs<sub>x</sub>Sb<sub>1-x</sub>) crystals have been grown from melts of Indium(In), Arsenic(As) and Antimony(Sb) by the vertical directional solidification technique using resistive heating furnace and quartz "double ampoule" after overcoming some problems like ampoule breaking and crystal cracking. A cooling rate of 2 °C/h is better for producing homogenous crystals. Cooling rates less than 2 °C/h result in breaking of the ampoule. The grown InAs<sub>x</sub>Sb<sub>1-x</sub> crystals are characterized by X-ray diffraction (XRD), electron probe micro analysis (EPMA) and Fourier transform infra red (FT-IR) which contributes to the identification of arsenic (x). Transmission spectra have been taken for the different sections of the crystal and the band gap has been calculated for as grown crystals. Optical transmission analysis indicates the incorporation of arsenic inside the grown crystals of InAs<sub>x</sub>Sb<sub>1-x</sub>. The energy gap decreases with the increase in the arsenic concentration, which implies the incorporation of Arsenic.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0925-8388</s0></fA01><fA03 i2="1"><s0>J. alloys compd.</s0></fA03><fA05><s2>548</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Structural, compositional and optical analysis of InAs<sub>x</sub>Sb<sub>1-x</sub> crystals grown by vertical directional solidification method</s1></fA08><fA11 i1="01" i2="1"><s1>HARIS (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>HAYAKAWA (Y.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHOU (F. C.)</s1></fA11><fA11 i1="04" i2="1"><s1>VEERAMANI (P.)</s1></fA11><fA11 i1="05" i2="1"><s1>MOORTHY BABU (S.)</s1></fA11><fA14 i1="01"><s1>Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku</s1><s2>Hamamatsu 432-8011</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Centerfor Condensed Matter Sciences, National Taiwan University</s1><s2>Taipei 10617</s2><s3>TWN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics, University of Surrey</s1><s2>Guildford GU2 7XH</s2><s3>GBR</s3><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>Crystal Growth Centre, Anna University</s1><s2>Chennai 600 025</s2><s3>IND</s3><sZ>5 aut.</sZ></fA14><fA20><s1>23-26</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>1151</s2><s5>354000506305410050</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>18 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0040461</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of alloys and compounds</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Semiconductor InAs<sub>x</sub>Sb<sub>1-x</sub> crystals exhibit superior infrared detection properties but their applications are limited by the lack of production of these stoichiometric single crystal substrates by any melt crystal growth techniques. Indium Arsenic Antimonide (InAs<sub>x</sub>Sb<sub>1-x</sub>) crystals have been grown from melts of Indium(In), Arsenic(As) and Antimony(Sb) by the vertical directional solidification technique using resistive heating furnace and quartz "double ampoule" after overcoming some problems like ampoule breaking and crystal cracking. A cooling rate of 2 °C/h is better for producing homogenous crystals. Cooling rates less than 2 °C/h result in breaking of the ampoule. The grown InAs<sub>x</sub>Sb<sub>1-x</sub> crystals are characterized by X-ray diffraction (XRD), electron probe micro analysis (EPMA) and Fourier transform infra red (FT-IR) which contributes to the identification of arsenic (x). Transmission spectra have been taken for the different sections of the crystal and the band gap has been calculated for as grown crystals. Optical transmission analysis indicates the incorporation of arsenic inside the grown crystals of InAs<sub>x</sub>Sb<sub>1-x</sub>. The energy gap decreases with the increase in the arsenic concentration, which implies the incorporation of Arsenic.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A10F</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A30F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Solidification dirigée</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Directional solidification</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Croissance cristalline en phase fondue</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Crystal growth from melts</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Détection IR</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Infrared detection</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Detección IR</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Méthode phase fondue</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Growth from melt</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Método fase fundida</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Croissance cristalline</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Crystal growth</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Antimoniure d'indium</s0><s2>NK</s2><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium antimonides</s0><s2>NK</s2><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Composé III-V</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>III-V compound</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Arsenic</s0><s2>NC</s2><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Arsenic</s0><s2>NC</s2><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Antimoine</s0><s2>NC</s2><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Antimony</s0><s2>NC</s2><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Traitement thermique</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Heat treatments</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Quartz</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Quartz</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Fissuration</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Cracking</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Monocristal</s0><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Monocrystals</s0><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Propriété mécanique</s0><s5>29</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Mechanical properties</s0><s5>29</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Vitesse refroidissement</s0><s5>30</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Cooling rate</s0><s5>30</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>31</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>XRD</s0><s5>31</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Sonde électronique</s0><s5>32</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Electron probes</s0><s5>32</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Analyse microsonde électronique</s0><s5>33</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Electron microprobe analysis</s0><s5>33</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Transformation Fourier</s0><s5>34</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Fourier transformation</s0><s5>34</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Spectre absorption</s0><s5>35</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Absorption spectra</s0><s5>35</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Bande interdite</s0><s5>36</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Energy gap</s0><s5>36</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Propriété électronique</s0><s5>37</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Electronic properties</s0><s5>37</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Propiedad electrónica</s0><s5>37</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Transmission optique</s0><s5>38</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Optical transmission</s0><s5>38</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Transmisión óptica</s0><s5>38</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Propriété optique</s0><s5>39</s5></fC03><fC03 i1="26" i2="3" l="ENG"><s0>Optical properties</s0><s5>39</s5></fC03><fC03 i1="27" i2="X" l="FRE"><s0>Réaction état solide</s0><s5>40</s5></fC03><fC03 i1="27" i2="X" l="ENG"><s0>Solid state reaction</s0><s5>40</s5></fC03><fC03 i1="27" i2="X" l="SPA"><s0>Reacción estado sólido</s0><s5>40</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>InAsxSb1-x</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>8130F</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>8110F</s0><s4>INC</s4><s5>72</s5></fC03><fN21><s1>021</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000470 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000470 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:13-0040461
|texte= Structural, compositional and optical analysis of InAsxSb1-x crystals grown by vertical directional solidification method
}}
| This area was generated with Dilib version V0.5.77. |  |